Influence of low temperature annealing on structure and photoelectric properties of MgZnO thin films

摘要

Structural and optical properties of Mg_xZn_(1-x)O (x=0.23) thin films grown by radio frequency (R.F.) magnetron sputtering and annealed with different temperature (from 100°C to 400°C) are reported. The films were single-phase, highly c-axis oriented and wurtzite structure. The transmission spectra, recorded in the visible range, reveal a high transmission coefficient (about 95%) in the obtained films. Besides, when the annealing temperature is 100°C, the crystalline grains are smooth, compact and uniformly distributed. As the annealing temperature increases from 100°C to 400°C, the crystalline grains get larger, but the annealing temperature does not influence optical transmittance obviously.