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Study of annealing effects on the physical properties of evaporated SnS thin films for photovoltaic applications

机译:退火对光伏应用蒸发SnS薄膜物理性能的影响

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Tin Sulphide (SnS) thin films have been deposited on glass slides by thermal evaporation using SnS powder. The improvements in the structural and optical properties of SnS thin films on annealing at different temperatures (200°C, 300°C, 400°C, and 500°C) in vacuum for one hour are presented in this work. The thin films annealed at 500°C w ere decomposed, which limits the annealing temperature belo w than 500°C. X-ray diffraction characterization showed an intensive peak at 31.8° originating from (111) reflection. Ellipsometry measurements were done for optical studies and optical absorption coefficient for as-deposited films was 2.02 x10 4 increased to 4.90 x10 4 (cm) -1 for films annealed to 300°C for incident photon energies 1.55eV, and direct band gap of 1.90 eV was indicated.
机译:硫化锡(SnS)薄膜已通过使用SnS粉末的热蒸发沉积在载玻片上。这项工作提出了在不同温度(200°C,300°C,400°C和500°C)的真空下退火一小时后SnS薄膜的结构和光学性能的改进。在500℃退火的薄膜分解,这限制了低于500℃的退火温度。 X射线衍射表征在31.8°处显示出源自(111)反射的强烈峰。进行了椭偏测量以进行光学研究,对于入射光子能量为1.55eV,退火至300°C且直接带隙为1.90的薄膜,沉积薄膜的光吸收系数从2.02 x10 4增加到4.90 x10 4(cm)-1指示eV。

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