Bias and geometry dependence of total-ionizing-dose effects in SOI FinFETs

摘要

In this paper, a systematic research on the total-ionizing-dose (TID) effects of NMOS and PMOS silicon-on-insulator (SOI) FinFETs is performed experimentally. The bias and geometry dependence of TID effects are analysed. The experimental results show that the threshold voltage (V-th) shift occurs in SOI FinFETs after x-ray irradiation. After 1 Mrad(Si) irradiation, the maximum V-th shift is about 40 mV. The 'worst case' irradiation bias conditions for NMOS and PMOS are TG and ON states, respectively, which induces the largest V-th shift after irradiation. The 3D TCAD simulation is carried out to further analyse the bias dependence results. Simulation results highlight the difference in electric field distribution in the buried oxide under different bias configurations, which leads to different distribution of irradiation-induced trapped charges. Finally, clear geometry dependence is observed in the TID experiment. Both NMOS and PMOS devices with larger fin width and/or smaller gate length are more sensitive to TID irradiation. The results deepen the understanding of the TID effect of SOI FinFETs and provide important technical support for the radiation-hardened research of FinFET technology.