SOI FINFET WITH REDUCED FIN WIDTH DEPENDENCE

摘要

The present invention relates to a method for polarizing at least a first finfet transistor (1000) and a second finfet transistor (1000), wherein the first finfet transistor has a fin width bigger than the fin width (W1) of the second finfet transistor, and both the first finfet transistor and the second finfet transistor have a back-gate (1600), and the method comprising applying the same first voltage on the back-gate of the first finfet transistor and on the back-gate of the second finfet transistor so as to reduce the spread between the off-current value of the first finfet transistor and the off-current value of the second finfet transistor.