首页>
外国专利>
SOI FINFET WITH REDUCED FIN WIDTH DEPENDENCE
SOI FINFET WITH REDUCED FIN WIDTH DEPENDENCE
展开▼
机译:具有减小的鳍片宽度依赖性的SOI FINFET
展开▼
页面导航
摘要
著录项
相似文献
摘要
The present invention relates to a method for polarizing at least a first finfet transistor and a second finfet transistor, wherein the first finfet transistor has a fin width bigger than the fin width of the second finfet transistor, and both the first finfet transistor and the second finfet transistor have a back gate, and the method comprising applying the same first voltage on the back gate of the first finfet transistor and on the back gate of the second finfet transistor so as to reduce the spread between the off-current value of the first finfet transistor and the off-current value of the second finfet transistor.
展开▼