Gate Bias and Geometry Dependence of Total-Ionizing-Dose Effects in InGaAs Quantum-Well MOSFETs

摘要

The effects of total-ionizing-dose irradiation are investigated in HfO2/InGaAs quantum-well MOSFETs. Radiation-induced hole trapping is higher for irradiation under positive gate bias than under negative gate bias. Electrical stress-induced electron trapping compensates radiation-induced hole trapping during positive gate-bias irradiation. Stress-induced hole trapping adds to the effects of radiation-induced hole trapping under negative gate bias. Radiation-induced charge trapping increases with the channel length.