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Instability in In0.7Ga0.3As Quantum-Well MOSFETs with Single-Layer Al2O3 and Bi-Layer Al2O3/HfO2 Gate Stacks Caused by Charge Trapping under Positive Bias Temperature (PBT) Stress

机译：在In0.7ga0.3as的不稳定性，用单层AL2O3和双层AL2O3 / HFO2栅极堆叠在正偏置温度（PBT）应力下引起的单层AL2O3和双层AL2O3 / HFO2堆叠

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Hyuk-Min Kwon; Dae-Hyun Kim; Tae-Woo Kim;
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1. Instability investigation of In0.7Ga0.3As quantum-well MOSFETs with Al2O3 and Al2O3/HfO2 [J] . Kwon Hyuk-Min, Kim Do-Kywn, Lim Sung-Kyu, Solid-State Electronics . 2016,第Jula期

机译：具有Al2O3和Al2O3 / HfO2的In0.7Ga0.3As量子阱MOSFET的不稳定性研究
2. Performance and carrier transport analysis of In0.7Ga0.3As quantum-well MOSFETs with Al2O3/HfO2 gate stack [J] . Son Seung-Woo, Park Jung-Ho, Baek Ji-Min, Solid-State Electronics . 2016,第SEPa期

机译：具有Al2O3 / HfO2栅堆叠的In0.7Ga0.3As量子阱MOSFET的性能和载流子传输分析
3. A Charge-Trapping Model for the Fast Component of Positive Bias Temperature Instability (PBTI) in High- (kappa ) Gate-Stacks [J] . Vandelli L., Larcher L., Veksler D., Electron Devices, IEEE Transactions on . 2014,第7期

机译：高（kappa）门堆叠中正偏置温度不稳定性（PBTI）的快速分量的电荷捕获模型
4. Trapping and detrapping of oxide border traps in Al2O3 gate dielectric in MoS2 n-MOSFETs under PBTI stress [C] . Hui-Wen Yuan, Hui Shen, Jun-Jie Li, IEEE International Conference on Solid-State and Integrated Circuit Technology . 2016

机译：PBTI应力下MoS2 n-MOSFET中Al2O3栅极电介质中氧化物边界陷阱的俘获和去陷阱
5. Charge trapping effects on mobility and threshold voltage instability in high-k gate stacks. [D] . Sim, Jang Hoan. 2005

机译：电荷陷阱对高k栅极堆叠中的迁移率和阈值电压不稳定性产生影响。
6. Border Trap Characterizations of Al2O3/ZrO2 and Al2O3/HfO2 Bilayer Films Based on Ambient Post Metal Annealing and Constant Voltage Stress [O] . Md. Mamunur Rahman, Dae-Hyun Kim, Tae-Woo Kim 2020

机译：基于环境后金属退火和恒压应力的Al2O3 / ZrO2和Al2O3 / HfO2双层薄膜的边界陷阱表征
7. Characterization of Negative-Bias Temperature Instability of Ge MOSFETs With GeO2/Al2O3 Stack [O] . Ma, J, Zhang, JF, Ji, Z, 2014

机译：具有GeO2 / Al2O3堆叠的Ge MOSFET的负偏压温度不稳定性的表征

Instability in In0.7Ga0.3As Quantum-Well MOSFETs with Single-Layer Al2O3 and Bi-Layer Al2O3/HfO2 Gate Stacks Caused by Charge Trapping under Positive Bias Temperature (PBT) Stress

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