Mosfet semiconductors; Trapping(Charged particles); Holes(Electron deficiencies); Radiation measuring instruments; Sensitivity; Atmospheres; Bias; Charge transfer; Concentration(Chemistry); Deficiencies; Detectors; Diffusivity; Electric charge; Electric fields; E;
机译:三栅极MOSFET对总剂量辐照的响应的鳍宽度和偏置依赖性
机译:栅极偏置对65nm CMOS nMOSFET 60MeV质子辐射响应的影响
机译:高电场和高温偏置应力对功率VDMOSFET辐射响应的影响
机译:正栅极偏置应力对功率VDMOSFET辐射响应的影响
机译:射频硅LDMOSFET中虚拟栅极(场板)偏置效应的表征和建模。
机译:负栅偏置SiC MOSFET的辐射响应
机译:负栅偏置SiC MOSFET的辐射响应