首页> 外文期刊>Physical review. B, Condensed Matter And Materials Physics >Suppression of weak antilocalization in an Al_xGa_(1-x)N/GaN two-dimensional electron gas by an in-plane magnetic field
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Suppression of weak antilocalization in an Al_xGa_(1-x)N/GaN two-dimensional electron gas by an in-plane magnetic field

机译:通过面内磁场抑制Al_xGa_(1-x)N / GaN二维电子气中的弱反局部化

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摘要

We studied the suppression of weak antilocalization in an Al_xGa_(1-x)N/GaN two-dimensional electron gas in the presence of an additional in-plane magnetic field. By comparing our experimental data to a theoretical model, we concluded that the suppression can be attributed mainly to the Zeeman effect, while the contribution due to disorder at the Al_xGa_(1-x)N/GaN heterointerface is considerably smaller. Furthermore, our results give further evidence for the value of spin-orbit scattering length determined from weak antilocalization measurements.
机译:我们研究了在存在附加面内磁场的情况下,在Al_xGa_(1-x)N / GaN二维电子气中抑制弱的抗局部定位的问题。通过将我们的实验数据与理论模型进行比较,我们得出的结论是,抑制作用主要归因于塞曼效应,而Al_xGa_(1-x)N / GaN异质界面处的无序贡献则较小。此外,我们的结果为从弱反定位测量确定的自旋轨道散射长度值提供了进一步的证据。

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