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Symposium on GaN, AIN, InN and Related Materials

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1.Growth of Large AlN Single Crystals Along the 0001 Direction

机译：沿0001方向的大Aln单晶的生长
- 作者：Ziad G. Herro;Dejin Zhuang;Raoul Schlesser;Ramon Collazo;Zlatko Sitar;Materials Research Society(MRS)(US)
- 会议名称：《Symposium on GaN, AIN, InN and Related Materials》 | 2006年
2.Effects of the high-refractive index SiNx passivation on AlGaN/GaN HFETs with a very low gate-leakage current

机译：高折射率SINX钝化对基ALGAN / GAN HFET的影响极低栅极漏电流
- 作者：Hiroshi Kambayashi;Takahiro Wada;Nariaki Ikeda;Seikoh Yoshida;Materials Research Society(MRS)(US)
- 会议名称：《Symposium on GaN, AIN, InN and Related Materials》 | 2006年
3.High quantum efficiency of photoluminescence in GaN and ZnO

机译：GaN和ZnO中的光致发光高量子效率
- 作者：M. A. Reshchikov;X. Gu;B. Nemeth;J. Nause;H. Morkoc;Materials Research Society(MRS)(US)
- 会议名称：《Symposium on GaN, AIN, InN and Related Materials》 | 2006年
4.High Degree of Crystalline Perfection in Spontaneously Grown GaN Nanowires

机译：自发生长的GaN纳米线中的高晶体完美
- 作者：K. A. Bertness;J. B. Schlager;N. A. Sanford;A. Roshko;T. E. Harvey;A. V. Davydov;I. Levin;M. D. Vaudin;J. M. Barker;P. T. Blanchard;L. H. Robins;Materials Research Society(MRS)(US)
- 会议名称：《Symposium on GaN, AIN, InN and Related Materials》 | 2006年
5.Perturbation of charges in AlGaN/GaN heterostructures studied by nanoscale capacitance-voltage technique

机译：纳米级电容 - 电压技术研究的AlGaN / GaN异质结构扰动
- 作者：G. Koley;L. Lakshmanan;Materials Research Society(MRS)(US)
- 会议名称：《Symposium on GaN, AIN, InN and Related Materials》 | 2006年
6.Time-resolved Spectroscopy of Excitons Bound at Shallow Neutral Donors in HVPE GaN

机译：在HVPE GaN中浅中性供体的激子弹的时间分辨光谱
- 作者：B. Monemar;P. P. Paskov;J. P. Bergman;T. Malinauskas;K. Jarasiunas;A. A. Toropov;T. V. Shubina;A. Usui;Materials Research Society(MRS)(US)
- 会议名称：《Symposium on GaN, AIN, InN and Related Materials》 | 2006年
7.MgZnO Nanocrystallites: Photoluminescence and Phonon Properties

机译：Mgzno纳米晶体：光致发光和声子属性
- 作者：John L. Morrison;Xiang-Bai Chen;Jesse Huso;Heather Hoeck;James Mitchell;Leah Bergman;Tsvetanka Zheleva;Materials Research Society(MRS)(US)
- 会议名称：《Symposium on GaN, AIN, InN and Related Materials》 | 2006年
8.Scanning Tunneling Microscopy Study of Cr-doped GaN Surface Grown by RF Plasma Molecular Beam Epitaxy

机译：RF等离子体分子束外延生长Cr掺杂GaN表面的扫描隧道显微镜研究
- 作者：Muhammad B. Haider;Rong Yang;Hamad Al-Brithen;Costel Constantin;Arthur R. Smith;Gabriel Caruntu;Charles J. OConnor;Materials Research Society(MRS)(US)
- 会议名称：《Symposium on GaN, AIN, InN and Related Materials》 | 2006年
9.Rapid growth of bulk GaN crystal using GaN powder as source material

机译：使用GaN粉作为源材料的散装GaN晶体的快速生长
- 作者：Huaqiang Wu;Joseph Spinelli;Phanikumar Konkapaka;Michael G. Spencer;Materials Research Society(MRS)(US)
- 会议名称：《Symposium on GaN, AIN, InN and Related Materials》 | 2006年
10.Study of Lascr-dcbondcd GaN Light Emitting Diodes

机译：LASCR-DCBondcd GAN发光二极管的研究
- 作者：C. P. Chan;T. M. Yue;C. Surya;A. M. C. Ng;A. B. Djurisic;C. K. Liu;M. Li
- 会议名称：《Symposium on GaN, AIN, InN and Related Materials》 | 2006年
11.Metal Organic Chemical Vapor Deposition of ZnO

机译：ZnO的金属有机化学气相沉积
- 作者：William E. Fenwick;Vincent T. Woods;Ming Pan;Nola Li;Matthew H. Kane;Shalini Gupta;Varatharajan Rengarajan;Jeff Nause;Ian T. Ferguson;Materials Research Society(MRS)(US)
- 会议名称：《Symposium on GaN, AIN, InN and Related Materials》 | 2006年
12.Structural and optical properties of MOCVD InAlN epilayers

机译：MOCVD INALN HONILAYERS的结构和光学性质
- 作者：S. Hernandez;K. Wang;D. Amabile;E. Nogales;D. Pastor;R. Cusco;L. Artus;R.W. Martin;K.P. ODonnell;I.M. Watson;Materials Research Society(MRS)(US)
- 会议名称：《Symposium on GaN, AIN, InN and Related Materials》 | 2006年
13.Effects of GaN passivation with SiO_2 and SiN_x studied by photoluminescence and surface potential electric force microscopy

机译：通过光致发光和表面电位电力显微镜研究GaN钝化与SiO_2和Sin_x的影响
- 作者：S. Chevtchenko;M. A. Reshchikov;K. Zhu;Y.-T. Moon;A. A. Baski;H. Morkoc;Materials Research Society(MRS)(US)
- 会议名称：《Symposium on GaN, AIN, InN and Related Materials》 | 2006年
14.Modification of InN Properties by Interactions with Hydrogen and Nitrogen

机译：通过与氢气和氮的相互作用改变套装特性
- 作者：Maria Losurdo;Maria M. Giangregorio;Giovanni Bruno;Tong-Ho Kim;Pae Wu;Soojeong Choi;Mike Morse;April Brown;Francesco Masia;Antonio Polimeni;Mario Capizzi;Materials Research Society(MRS)(US)
- 会议名称：《Symposium on GaN, AIN, InN and Related Materials》 | 2006年
15.Polarized Photoluminescence Study on AlGaN of AlGaN/GaN Heterostructure

机译：AlGaN / GaN异质结构AlGAN的偏振光致发光研究
- 作者：S. Kitagawa;K. Kosaka;T. Tsuchiya;A. Suzuki;T. Araki;Y. Nanishi;Materials Research Society(MRS)(US)
- 会议名称：《Symposium on GaN, AIN, InN and Related Materials》 | 2006年
16.Electron Transport Properties of InN

机译：Inn电子传输特性
- 作者：R.E. Jones;H.C.M. van Genuchten;S.X. Li;L. Hsu;K.M. Yu;W. Walukiewicz;J.W. Ager III;E.E. Haller;H. Lu;W. J. Schaff;Materials Research Society(MRS)(US)
- 会议名称：《Symposium on GaN, AIN, InN and Related Materials》 | 2006年
17.Reliability and degradation modes of 280 nm deep UV LEDs on sapphire

机译：蓝宝石280 nm深紫色LED的可靠性和降解模式
- 作者：Z. Gong;S. Chhajed;M. E. Gaevski;W. H. Sun;V. Adivarahan;M. Shatalov;M. Asif Khan;Materials Research Society(MRS)(US)
- 会议名称：《Symposium on GaN, AIN, InN and Related Materials》 | 2006年
18.Optical Properties of GaN Photonic Crystal Membrane Nanocavities at Blue Wavelengths

机译：蓝波长GaN光子晶体膜纳米瓦纳米光学性质
- 作者：Yong Seok Choi;Cedrik Meier;Rajat Sharma;Kevin Hennessy;Elaine D. Haberer;Shuji Nakamura;Evelyn L. Hu;Materials Research Society(MRS)(US)
- 会议名称：《Symposium on GaN, AIN, InN and Related Materials》 | 2006年
19.Luminescence Efficiency of InGaN/GaN Quantum Wells on Bulk GaN Substrate

机译：InGaN / GaN量子阱对散装GaN衬底的发光效率
- 作者：M. Dworzak;T. Stempel;A. Hoffmann;G. Franssen;S. Grzanka;T. Suski;R. Czernecki;M. Leszczynski;I. Grzegory;Materials Research Society(MRS)(US)
- 会议名称：《Symposium on GaN, AIN, InN and Related Materials》 | 2006年
20.Raman scattering of self-assembled gallium nitride nanorods synthesized by plasma-assisted molecular beam epitaxy

机译：等离子体辅助分子束外延合成自组装氮化镓纳米棒的拉曼散射
- 作者：D. Wang;C.-C. Tin;J. R. Williams;M. Park;Y. S. Park;C. M. Park;T. W. Kang;W.-C. Yang;Materials Research Society(MRS)(US)
- 会议名称：《Symposium on GaN, AIN, InN and Related Materials》 | 2006年
21.Crystal Growth and Defect Characterization of AlN Single Crystals

机译：Aln单晶的晶体生长和缺陷表征
- 作者：Shaoping Wang;Balaji Raghothamachar;Michael Dudley;Andrew G. Timmerman;Materials Research Society(MRS)(US)
- 会议名称：《Symposium on GaN, AIN, InN and Related Materials》 | 2006年
22.Epitaxial Growth of InGaN Quantum Dots Grown by MOVPE: Effect of Capping Process on Structural and Optical Properties

机译：由MOVPE生长的INGAN量子点的外延生长：封盖过程对结构和光学性质的影响
- 作者：Tomohiro Yamaguchi;Kathrin Sebald;Juergen Gutowski;Stephan Figge;Detlef Hommel;Materials Research Society(MRS)(US)
- 会议名称：《Symposium on GaN, AIN, InN and Related Materials》 | 2006年
23.Origins of Parasitic Emissions from 353 nm AlGaN-based UV LEDs over SiC Substrates

机译：基于353 nm algan的UV LED在SIC基板上的寄生发射的起源
- 作者：Ji-Soo Park;D. W. Fothergill;P. Wellenius;S. M. Bishop;J. F. Muth;R. F. Davis;Materials Research Society(MRS)(US)
- 会议名称：《Symposium on GaN, AIN, InN and Related Materials》 | 2006年
24.Fabrication and device characteristics of bulk GaN-based Schottky diodes

机译：散装GaN基肖特基二极管的制造与装置特征
- 作者：Yi Zhou;Dake Wang;Claude Ahyi;Chin-Che Tin;John Williams;Minseo Park;N. Mark Williams;Andrew Hanser;Materials Research Society(MRS)(US)
- 会议名称：《Symposium on GaN, AIN, InN and Related Materials》 | 2006年
25.Plasma-Assisted MOCVD Growth of ZnO Thin Films

机译：ZnO薄膜的等离子体辅助MOCVD生长
- 作者：Maria Losurdo;Maria M. Giangregorio;Pio Capezzuto;Giovanni Bruno;Graziella Malandrino;Manuela Blandino;Ignazio L. Fragala;Materials Research Society(MRS)(US)
- 会议名称：《Symposium on GaN, AIN, InN and Related Materials》 | 2006年
26.Dislocation Reduction and Structural Properties of GaN layers Grown on N~+-implanted AlN/Si (111) Substrates

机译：N〜+ -implanted ALN / Si（111）基材生长的GaN层的脱位减少和结构性能
- 作者：M. Jamil;J. R. Grandusky;V. Jindal;N. Tripathi;F. Shahedipour-Sandvik;Materials Research Society(MRS)(US)
- 会议名称：《Symposium on GaN, AIN, InN and Related Materials》 | 2006年
27.Surface Morphology and Island Shape of MOVPE Grown InGaN Nano-Island Ensembles Studied by STM

机译：STM研究Movpe种植IngaN纳米岛合奏的表面形态和岛状
- 作者：Subhashis Gangopadhyay;Thomas Schmidt;Sven Einfeldt;Tomohiro Yamaguchi;Detlef Hommel;Jens Falta;Materials Research Society(MRS)(US)
- 会议名称：《Symposium on GaN, AIN, InN and Related Materials》 | 2006年
28.Correlation between resistivity and yellow luminescence intensity of GaN layers grown by MOCVD

机译：MOCVD生长GaN层电阻率和黄色发光强度的相关性
- 作者：A. Hinoki;Y. Hiroyama;T. Tsuchiya;T. Yamada;M. Iwami;K. Imada;J. Kikawa;T. Araki;A. Suzuki;Y. Nanishi;Materials Research Society(MRS)(US)
- 会议名称：《Symposium on GaN, AIN, InN and Related Materials》 | 2006年
29.Characterization of Nitride Thin Films by Electron Backscatter Diffraction and Electron Channeling Contrast Imaging

机译：电子背散射衍射和电子通道对比成像的表征氮化物薄膜
- 作者：C. Trager-Cowan;F. Sweeney;A. J. Wilkinson;P. W. Trimby;A. P. Day;A. Gholinia;N.-H. Schmidt;P. J. Parbrook;I. M. Watson;Materials Research Society(MRS)(US)
- 会议名称：《Symposium on GaN, AIN, InN and Related Materials》 | 2006年
30.Influence of Nitrogen Species on InN Grown by PAMBE

机译：氮素物种对普博斯成长的影响
- 作者：P.A. Anderson;R. J. Kinsey;C.E. Kendrick;I. Farrell;D. Carder;R.J .Reeves;S.M. Durbin;Materials Research Society(MRS)(US)
- 会议名称：《Symposium on GaN, AIN, InN and Related Materials》 | 2006年
31.Growth, processing and characterization of GaN/AlGaN/SiC vertical n-p diodes

机译：GaN / AlGaN / SiC垂直N-P二极管的生长，加工和表征
- 作者：S. Boeykens;M.R. Leys;M. Germain;J. Poortmans;B. Van Daele;S. Van Tendeloo;R. Belmans;G. Borghs;Materials Research Society(MRS)(US)
- 会议名称：《Symposium on GaN, AIN, InN and Related Materials》 | 2006年
32.Growth and characterization of semipolar InGaN/GaN multiple quantum wells and light-emitting diodes on (1011) GaN templates

机译：Semipolar Ingan / GaN多量子阱和发光二极管的生长和表征（1011）GaN模板
- 作者：Arpan Chakraborty;T. Onuma;T. J. Baker;S. Keller;S. F. Chichibu;S. P. DenBaars;S. Nakamura;J. S. Speck;U. K. Mishra;Materials Research Society(MRS)(US)
- 会议名称：《Symposium on GaN, AIN, InN and Related Materials》 | 2006年
33.Surface Recombination and Vacuum/GaN/AlGaN Surface Quantum Wells

机译：表面重组和真空/ GaN / AlGaN表面量子孔
- 作者：Xiyao Zhang;I. P. Wellenius;A. L. Cai;J. F. Muth;John Roberts;Pradeep Rajagopal;Jim Cook;Eddie Piner;Kevin Linthicum;Materials Research Society(MRS)(US)
- 会议名称：《Symposium on GaN, AIN, InN and Related Materials》 | 2006年
34.Near-field photoluminescence spectroscopy of InGaN quantum dots

机译：InGaN量子点的近场光致发光光谱
- 作者：A. M. Mintairov;J. L. Merz;D. S. Sizov;V. S. Sizov;V. V. Lundin;S. O. Usov;E. E. Zavarin;A. F. Tsatsulnikov;Yu. G. Musikhin;A. S. Vlasov;N. N. Ledentsov;Materials Research Society(MRS)(US)
- 会议名称：《Symposium on GaN, AIN, InN and Related Materials》 | 2006年
35.Opto-electronic Simulation of GaN Nanowire Lasers

机译：GaN纳米线激光器的光电仿真
- 作者：Liang Chen;Elias Towe;Materials Research Society(MRS)(US)
- 会议名称：《Symposium on GaN, AIN, InN and Related Materials》 | 2006年
36.Morphological study of InN films and nanorods grown by H-MOVPE

机译：H-Movpe种植的INN薄膜和纳米码的形态学研究
- 作者：H.J. Park;S.W. Kang;O. Kryliouk;T. Anderson;Materials Research Society(MRS)(US)
- 会议名称：《Symposium on GaN, AIN, InN and Related Materials》 | 2006年
37.Properties of InN Grown by High-Pressure CVD

机译：高压CVD的Inn的特性
- 作者：Mustafa Alevli;Goksel Durkaya;Vincent Woods;Ute Haboeck;Hun Kang;Jayantha Senawiratne;Martin Strassburg;Ian T. Ferguson;Axel Hoffmann;Nikolaus Dietz;Materials Research Society(MRS)(US)
- 会议名称：《Symposium on GaN, AIN, InN and Related Materials》 | 2006年
38.Growth of Nonpolar AlN and AlGaN on 4H-SiC (1-100) by Molecular Beam Epitaxy

机译：分子束外延的非极性AlN和AlGaN的生长型（1-100）
- 作者：Rob Armitage;Masahiro Horita;Jun Suda;Tsunenobu Kimoto;Materials Research Society(MRS)(US)
- 会议名称：《Symposium on GaN, AIN, InN and Related Materials》 | 2006年