首页> 外文期刊>Nuclear Instruments & Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment >First experimental and simulation study on the secondary electron and photoelectron yield of NEG materials (Ti-Zr-V) coating under intense photon irradiation
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First experimental and simulation study on the secondary electron and photoelectron yield of NEG materials (Ti-Zr-V) coating under intense photon irradiation

机译:强光子辐照下NEG材料(Ti-Zr-V)涂层二次电子和光电子产率的首次实验和模拟研究

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A beam duct coated with NEG materials (Ti, Zr, V), which had been known to have a low secondary electron yield (SEY), was studied for the first time under intense photon irradiation using a positron beam at the KEK B-Factory (KEKB) to investigate a way to suppress the electron cloud instability (ECI). A 2.56 m test copper chamber was coated with the NEG materials (we call it NEG coating here) by magnetron sputtering. It was installed at an arc section of the KEKB positron ring, where the chamber was irradiated by direct photons with a line density of 6.5 x 10~(14) photons m~(-1) s~(-1) mA~(-1). The vacuum pressure around the test chamber during a usual beam operation was lower than the case of non-coated copper chambers by a factor of 4-5. The number of electrons around positron bunches was measured by a special electron monitor up to a stored beam current of 1600 mA. The measured electron current, however, was almost the same as a non-coated copper chamber, especially at low-beam currents, and the effect of the NEG coating was smaller than expected. A simulation explained the result that abundant photoelectrons in the positron ring reduce the effect of the low SEY. The maximum SEYs of the NEG coating and non-coated copper were evaluated using a simulation as about 0.9-1.0 and 1.1-1.3, respectively, which were consistent with the values after a sufficient electron bombardment. Their photoelectron yields were also estimated as 0.22-0.28 and 0.26-0.34, respectively, and were in good agreement with the previous experimental results. The study indicates that the suppression of photoelectrons, by a beam duct with an antechamber, for example, is indispensable to make effective use of a surface with a low SEY, such as the NEG coating.
机译:KEK B工厂首次在强光子辐照下使用正电子束研究了涂覆有NEG材料(Ti,Zr,V)的束管,该束材料具有较低的二次电子产率(SEY)。 (KEKB)研究抑制电子云不稳定性(ECI)的方法。通过磁控溅射在一个2.56 m的测试铜室上涂覆NEG材料(在此称为NEG涂层)。它安装在KEKB正电子环的弧形部分,在该室中,腔室被线密度为6.5 x 10〜(14)光子m〜(-1)s〜(-1)mA〜(-)的直接光子照射1)。在通常的光束操作过程中,测试室周围的真空压力比未镀膜的铜室低4-5倍。正电子束周围的电子数量是通过特殊的电子监视器测量的,直到存储的电子束电流为1600 mA。但是,测得的电子电流几乎与未镀膜的铜室相同,尤其是在低束电流下,并且NEG涂层的作用小于预期。模拟解释了这样的结果,即正电子环中的大量光电子会降低低SEY的影响。使用模拟对NEG涂层和未涂层​​铜的最大SEY分别进行了评估,分别为约0.9-1.0和1.1-1.3,这与充分电子轰击后的值一致。它们的光电子产率也分别估计为0.22-0.28和0.26-0.34,并且与先前的实验结果非常吻合。研究表明,例如,通过带有前室的束导管抑制光电子对于有效利用低SEY的表面(例如NEG涂层)是必不可少的。

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