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首页> 外文期刊>Nuclear Instruments & Methods in Physics Research >Tracking performance and simulation of capacitively coupled pixel detectors for the CLIC vertex detector
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Tracking performance and simulation of capacitively coupled pixel detectors for the CLIC vertex detector

机译:跟踪CLIC顶点检测器电容耦合像素探测器的性能和仿真

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In order to achieve the challenging requirements on the CLIC vertex detector, a range of technology options have been considered in recent years. One prominent idea is the use of active sensors implemented in a commercial high-voltage CMOS process, capacitively coupled to hybrid pixel readout chips. Recent results have shown the approach to be feasible, though more detailed studies of the performance of such devices, including simulation, are required. The CLICdp collaboration has developed a number of ASICs as part of its vertex detector R&D programme, and here we present results on the performance of a CCPDv3 active sensor glued to a CLICpix readout chip. Charge collection characteristics and tracking performance have been measured over the full expected angular range of incident particles using 120 GeV/c secondary hadron beams from the CERN SPS. Single hit efficiencies have been observed above 99% in the full range of track incidence angles, down to shallow angles. The single hit resolution has also been observed to be stable over this range, with a resolution around 6 mu m. The measured charge collection characteristics have been compared to simulations carried out using the Sentaurus TCAD finite-element simulation package combined with circuit simulations and parametrisations of the readout chip response. The simulations have also been successfully used to reproduce electric fields, depletion depths and the current-voltage characteristics of the device, and have been further used to make predictions about future device designs.
机译:为了达到Clic Vertex探测器的具有挑战性要求,近年来已经考虑了一系列技术选择。一个突出的思想是在商业高压CMOS过程中使用所实现的有源传感器,电容耦合到混合像素读数芯片。最近的结果显示了可行的方法,尽管需要对这种设备的性能进行更详细的研究,包括模拟,包括模拟。 CLICDP协作开发了许多ASIC作为其顶点探测器研发程序的一部分,在这里,我们呈现出CCPDV3有效传感器粘合到CLICPIX读数芯片的性能的结果。电荷收集特性和跟踪性能已超过入射粒子的使用120电子伏特/ C次级强子从CERN SPS束充分预期角度范围测量。在轨道入射角的全部范围内,单击效率在99%以上观察到99%,下降到浅角度。在这个范围内也被观察到单一的分辨率稳定,分辨率约为6亩。已经将测量的电荷收集特性与使用Sentaurus TCAD有限元模拟封装进行的模拟进行了比较,以及读出芯片响应的电路模拟和参数分析。仿真也已成功地用于再现设备的电场,耗尽深度和电流 - 电压特性,并且已经进一步用于对未来设备设计进行预测。

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