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Tracking performance and simulation of capacitively coupled pixel detectors for the CLIC vertex detector

机译:CLIC顶点检测器的电容耦合像素检测器的跟踪性能和仿真

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摘要

In order to achieve the challenging requirements on the CLIC vertex detector, a range of technology options have been considered in recent years. One prominent idea is the use of active sensors implemented in a commercial high-voltage CMOS process, capacitively coupled to hybrid pixel readout chips. Recent results have shown the approach to be feasible, though more detailed studies of the performance of such devices, including simulation, are required. The CLICdp collaboration has developed a number of ASICs as part of its vertex detector R&D programme, and here we present results on the performance of a CCPDv3 active sensor glued to a CLICpix readout chip. Charge collection characteristics and tracking performance have been measured over the full expected angular range of incident particles using 120 GeV/c secondary hadron beams from the CERN SPS. Single hit efficiencies have been observed above 99% in the full range of track incidence angles, down to shallow angles. The single hit resolution has also been observed to be stable over this range, with a resolution around 6 mu m. The measured charge collection characteristics have been compared to simulations carried out using the Sentaurus TCAD finite-element simulation package combined with circuit simulations and parametrisations of the readout chip response. The simulations have also been successfully used to reproduce electric fields, depletion depths and the current-voltage characteristics of the device, and have been further used to make predictions about future device designs.
机译:为了满足CLIC顶点检测器的挑战性要求,近年来已经考虑了多种技术选择。一个突出的想法是使用在商用高压CMOS工艺中实现的有源传感器,该传感器与混合像素读出芯片电容耦合。最近的结果表明该方法是可行的,尽管需要对此类设备的性能进行更详细的研究,包括仿真。 CLICdp合作开发了许多ASIC,作为其顶点检测器R&D计划的一部分,在这里,我们介绍粘贴在CLICpix读出芯片上的CCPDv3有源传感器的性能结果。已经使用来自CERN SPS的120 GeV / c次级强子束在入射粒子的整个预期角度范围内测量了电荷收集特性和跟踪性能。在整个轨道入射角范围内(直至小角度),单次击球效率均超过99%。还观察到单命中分辨率在此范围内稳定,分辨率约为6微米。已将测得的电荷收集特性与使用Sentaurus TCAD有限元仿真软件包进行的仿真进行了比较,并结合了电路仿真和读出芯片响应的参数设置。仿真也已成功用于再现电场,耗尽深度和器件的电流-电压特性,并且已被进一步用于预测未来的器件设计。

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