Boron penetration effecting gate oxide reliability of 50 A PMOS devices

摘要

Modern CMOS technology widely utilizes dual poly gate technology to create surface channel PMOS devices with a low threshold voltage. This article presents the analysis of degradation and gate oxide reliability in 50 A oxide P~+-poly PMOS transistors. The post-boron implant anneal temperature is used to vary the amount of boron penetation into the oxide. Results indicate the significant role of boron in the reduction of the gate oxide lifetime of PMOS devices and enhanced electron trapping in the oxide. This degradation correlates with the threshold voltage variation due to channel doping change. The stress-induced leakage current does not seem to be affected by the boron penetration effect.