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首页> 外文期刊>Microelectronic Engineering >Conformal Electroless Deposition Of Cu Seed Layer On A 60-nm Trench Pattern Modified With A Self-assembled Monolayer
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Conformal Electroless Deposition Of Cu Seed Layer On A 60-nm Trench Pattern Modified With A Self-assembled Monolayer

机译:自组装单层膜修饰的60 nm沟槽图案上的铜籽晶层的保形化学沉积

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We have developed a novel activation technique for the conformal electroless deposition (ELD) of Cu on a SiO_2 substrate modified with an organic self-assembled monolayer. The SiO_2 substrate was modified with amine groups using 3-aminopropyltriethoxysilane and Au nanoparticles (AuNPs) to form a uniform, continuous catalyst for ELD. The Au catalytic layer formed on the amine-SiO_2 substrate was stabilized by electrostatic interactions between the positively charged protonated-amine self-assembled monolayer (SAM) and negatively charged AuNPs. Cu films were then electrolessly deposited on Au-catalyzed SiO_2 substrates. The Cu seed layer formed by this method showed a highly conformal and continuous structure. Cu electrodeposition on the 60-nm trench was demonstrated using an acid cupric sulfate electrolyte containing chloride, polyethylene glycol 4000 and bis(3-sulfopropyl)disulfide. The resulting electroplated Cu showed excellent filling capability and no voids or other defects were observed in a 60-nm trench pattern.
机译:我们已经开发了一种新颖的活化技术,用于在有机自组装单层改性的SiO_2基底上进行Cu的保形化学沉积(ELD)。使用3-氨基丙基三乙氧基硅烷和Au纳米粒子(AuNPs)对SiO_2基材进行氨基修饰,以形成均匀,连续的ELD催化剂。通过带正电的质子化胺自组装单层(SAM)和带负电的AuNPs之间的静电相互作用,可以稳定在胺-SiO_2衬底上形成的Au催化层。然后将铜膜化学沉积在Au催化的SiO_2衬底上。通过这种方法形成的Cu籽晶层显示出高度保形和连续的结构。使用包含氯化物,聚乙二醇4000和双(3-磺丙基)二硫化物的酸性硫酸铜电解质证明了在60 nm沟槽上进行铜电沉积。所得的电镀铜显示出优异的填充能力,并且在60nm的沟槽图案中未观察到空隙或其他缺陷。

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