SILC in MOS Capacitors with Poly-Si and Poly-Si_0.7Ge_0.3 Gate Material

摘要

In this paper the DC-SILC characteristics of n~+ and p~+ poly-Si and poly-SiGe MOS capacitors are studied for substrate(+V_g) and gate-injection(-V_g) conditions. P~+ and n~+ -gates with poly silicon (poly-Si) and poly Silicon-Germanium (poly Si-_0.7Ge_0.3) were used to study the influence of the gate workfunction on gate current and SILC currents. For n~+ poly-SiGe, reduced poly depletion and no significant difference in SILC characteristics compared to n~+ poly-Si gate devices is observed. For p~+ gate devices asymmetric SILC and reduced SILC for poly-SiGe is observed.