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Step-shaped floating poly-si gate to improve a gate coupling ratio for flash memory application
Step-shaped floating poly-si gate to improve a gate coupling ratio for flash memory application
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机译:阶梯形浮动多晶硅栅极,提高了闪存应用的栅极耦合率
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摘要
A stacked-gate flash memory cell is provided having step-shaped poly-gates with increased overlap area between them in order to increase the coupling ratio and hence the program speed of the cell. The floating gate is first formed with a step and the intergate dielectric is conformally shaped thereon followed by the forming of the control gate thereon. The increase in the-overlap area can be achieved by forming gates with multiply connected surfaces of different shapes.
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