首页>
外国专利>
METHOD FOR FABRICATING FLOATING GATE OF FLASH MEMORY DEVICE TO IMPROVE COUPLING RATIO AND REDUCE VOLTAGE APPLIED TO CONTROL GATE
METHOD FOR FABRICATING FLOATING GATE OF FLASH MEMORY DEVICE TO IMPROVE COUPLING RATIO AND REDUCE VOLTAGE APPLIED TO CONTROL GATE
展开▼
机译:制造闪存器件的浮动栅极以提高耦合比并降低应用于控制栅极的电压的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
PURPOSE: A method for fabricating a floating gate of a flash memory device is provided to improve a coupling ratio and reduce a voltage applied to a control gate by increasing the area of a floating gate. CONSTITUTION: Polysilicon is formed on a silicon substrate. Dopants are injected to the polysilicon. A photoresist pattern is formed and etched on the polysilicon. The polysilicon is formed on the silicon substrate on which a gate oxide layer is grown. The injected dopants are diffused by an annealing process.
展开▼