首页> 外国专利> METHOD FOR CONVERGING THRESHOLD VOLTAGE OF MEMORY CELL IN FLASH MEMORY ARRAY AFTER MEMORY CELL IS ERASED AND FLASH MEMORY ARRAY HAVING POWER SOURCE CONTROLLED ACCORDING TO SAME METHOD SO THAT GATE VOLTAGE AND DRAIN VOLTAGE FOR CONVERGING THRESHOLD VOLTAGE OF MEMORY CELL ARE APPLIED

METHOD FOR CONVERGING THRESHOLD VOLTAGE OF MEMORY CELL IN FLASH MEMORY ARRAY AFTER MEMORY CELL IS ERASED AND FLASH MEMORY ARRAY HAVING POWER SOURCE CONTROLLED ACCORDING TO SAME METHOD SO THAT GATE VOLTAGE AND DRAIN VOLTAGE FOR CONVERGING THRESHOLD VOLTAGE OF MEMORY CELL ARE APPLIED

机译:擦除存储器单元后,将闪存单元中的阈值电压收敛到闪存存储器中,并且闪存门阵列具有按相同方法控制电源的方法,即门电压和漏极电压用于聚合存储单元的阈值电压

摘要

PURPOSE: To make the threshold value of an erased cell converge on a larger positive value by making good use of self-convergence. ;CONSTITUTION: A drain disturbance voltage VD is applied to 1 bit line of the memory array. Overerasure, however, begins to be corrected with a negative gate voltage VG at this time and then the gate voltage VG is increased stepwise up to a desired minimum threshold value. The threshold value of the erased cell can be made to converge on a larger positive value by making good use of self-convergence. Further, a voltage VG which becomes larger than 0 and is applied during the self-convergence is used to obtain a threshold value distribution having small variance. This converging method is used to raise the threshold voltage of the overerased cell caused by the continuous application of erasure pulses.;COPYRIGHT: (C)1996,JPO
机译:目的:通过充分利用自收敛,使已擦除单元的阈值收敛于较大的正值。 ;组成:漏极干扰电压VD施加到存储器阵列的1位线。但是,此时开始用负的栅极电压VG校正过度擦除,然后逐步将栅极电压VG增大到所需的最小阈值。通过充分利用自收敛,可以使擦除单元的阈值收敛于较大的正值。此外,在自收敛期间施加的大于0的电压VG被用于获得具有小的方差的阈值分布。这种会聚方法用于提高由于连续施加擦除脉冲而导致的过度擦除单元的阈值电压。; COPYRIGHT:(C)1996,JPO

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