SEMICONDUCTOR DEVICES HAVING A CONTROL GATE ELECTRODE INCLUDING A METAL LAYER FILLING A GAP REGION BETWEEN ADJACENT FLOATING GATES CAPABLE OF LOWERING AN OPERATING VOLTAGE OF FLASH MEMORY DEVICES AND FABRICATING METHODS THEREOF

摘要

PURPOSE: Semiconductor devices having a control gate electrode including a metal layer filling a gap region between adjacent floating gates and fabricating methods thereof are provided to improve a program characteristic and an erasing characteristic by preventing a depletion layer from being formed in a lowermost metal layer of a control gate electrode.;CONSTITUTION: An element isolation layer(11a) limiting a plurality of active regions(1a) is formed on a fixed region of a semiconductor substrate(1). A control gate electrode(30) chooses a metal layer as a lowermost layer. A floating gate(17a) is arranged between the active region and the control gate electrode. Floating gates provide a gap region on an element isolation film between the floating gates. A gate interlayer insulation layer(24) is formed between the floating gates and the control gate electrode.;COPYRIGHT KIPO 2012