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SEMICONDUCTOR DEVICES HAVING A CONTROL GATE ELECTRODE INCLUDING A METAL LAYER FILLING A GAP BETWEEN ADJACENT FLOATING GATES AND METHODS OF FABRICATING THE SAME
SEMICONDUCTOR DEVICES HAVING A CONTROL GATE ELECTRODE INCLUDING A METAL LAYER FILLING A GAP BETWEEN ADJACENT FLOATING GATES AND METHODS OF FABRICATING THE SAME
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机译:具有控制门电极的半导体器件,其中包括金属层填充相邻浮动门之间的间隙及其制造方法
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摘要
A semiconductor device includes a device isolation layer defining a plurality of active regions of a semiconductor substrate, floating gates and a control gate electrode in which the lowermost part of the electrode is constituted by a metal layer. The control gate electrode crosses over the active regions. The floating gates are disposed between the control gate electrode and the active regions. The tops of the floating gates are disposed at a level above the level of the top of the device isolation layer such that a gap is defined between adjacent ones of the floating gates. A region of the gap is filled with the metal layer of the control gate electrode.
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