Effect of an Al Overlayer on Interface States in Poly-Si Gate MOS Capacitors.

摘要

The presence of an aluminum overlayer on the polysilicon gate of Metal Oxide Semiconductor capacitors was found to strongly enhance the generation of interface states by ionizing radiation and Fowler-Nordheim electron injection. The effect is eliminated by removal of the metal before, but not after, sintering. The reduction, during the sinter, of water-related species by the aluminum, producing atomic hydrogen, is suggested as the probable cause of this behavior. Reprint. (AW)