Minority carrier tunneling and stress-induced leakage current for p/sup +/ gate MOS capacitors with poly-Si and poly-Si/sub 0.7/Ge/sub 0.3/ gate material

摘要

In this paper the I-V conduction mechanism for gate injection (-V/sub g/), Stress-Induced Leakage Current (SILC) characteristics and time-to-breakdown (t/sub bd/) of PMOS capacitors with p/sup +/-poly-Si and poly-SiGe gate material on 5.6, 4.8 and 3.1 nm oxide thickness are studied. A model based on Minority Carrier Tunneling (MCT) from the gate is proposed for the I-V and SILC characteristics at -V/sub g/ of our devices. Time-to-breakdown data are presented and discussed.