Microsystems using three-dimensional integration and TSV technologies: Fundamentals and applications

摘要

As a powerful enabling technology, three-dimensional (3D) integration, which uses wafer bonding to integrate multiple wafers in the vertical direction and uses through-silicon-vias (TSV) to electrically connect the wafers, have greatly promoted the technological advances and market development of MEMS in the past ten years. 3D integration enables heterogeneous integration of MEMS and IC chips fabricated with different technologies and materials, and thus permits the realization of integrated, sophisticated, and multifunctional microsystems with high performance, low cost, and compact size. This paper first introduces the fundamental fabrication technologies of 3D integration, and then reviews the recent progresses of MEMS and microsystems using 3D integration and TSV technologies. MEMS-CMOS integration, TSV-based wafer level packaging, 2.5D interposer integration of MEMS are illustrated with academic achievements and commercial products by functional categorization. Finally the conclusions are made and the future trends are discussed. (C) 2008 Elsevier B.V. All rights reserved.