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Avalanche Ruggedness Assessment of 1.2kV 45mΩ Asymmetric Trench SiC MOSFETs

机译：雪崩坚固性评估为1.2kV45MΩ不对称沟槽SIC MOSFET

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摘要

In this paper, avalanche ruggedness of the commercial 1.2kV 45mΩ asymmetric silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET) is investigated by single-pulse unclamped inductive switching (UIS) test. The avalanche safe operation area (SOA) of the MOSFET is established. The impact of inductance and temperature on avalanche capability is exhibited, which is valuable for many application circuits. The variation in critical avalanche energy with peak avalanche current, peak avalanche current with avalanche time, and temperature dependence of critical avalanche energy are confirmed.
机译：本文通过单脉冲未扫描电感切换（UIS）测试，研究了商业1.2kV45MΩ不对称碳化硅（SIC）金属氧化物半导体场效应晶体管（MOSFET）的雪崩坚固性。建立MOSFET的雪崩安全操作区域（SOA）。展示了电感和温度对雪崩能力的影响，这对许多应用电路都是有价值的。临界雪崩能量的变化，具有峰雪崩电流，具有雪崩时间的峰雪崩电流，以及临界雪崩能量的温度依赖性。

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  • 来源
    《Materials science forum》 |2020年第2020期|837-842|共6页
  • 作者

    Xiaochuan Deng; Hao Zhu; Xuan Li; Xiaojie Xu; Kun Zhou; Zhiqiang Li; Song Bai; Yourun Zhang; Bo Zhang;

  • 作者单位

    The State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China P. R. China Institute of Electronic and Information Engineering in Guangdong University of Electronic Science and Technology of China P. R. China;

    The State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China P. R. China;

    The State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China P. R. China;

    The State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China P. R. China;

    Microsystem & Terahertz Research Center China Academy of Engineering Physics P. R. China;

    Microsystem & Terahertz Research Center China Academy of Engineering Physics P. R. China;

    State Key Laboratory of Wide-bandgap Semiconductor Power Electronic Devices Nanjing Electronic Device Institute P. R. China;

    The State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China P. R. China;

    The State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China P. R. China;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    e counterse endurance; asymmetric trench MOSFET; silicon carbide;

    机译：e次耐力;不对称沟通MOSFET;碳化硅;

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