机译:绝缘体上新型锗结构的快速熔化生长在绝缘体上的石墨烯上形成锗(111)
Univ Teknol Malaysia, Malaysia Japan Int Inst Technol, Jalan Sultan Yahya Petra, Kuala Lumpur 54100, Malaysia;
Kyushu Univ, Dept Elect, 744 Motooka, Fukuoka 8190395, Japan;
Kyushu Univ, Dept Elect, 744 Motooka, Fukuoka 8190395, Japan;
Kyushu Univ, Dept Elect, 744 Motooka, Fukuoka 8190395, Japan;
Kyushu Univ, Dept Elect, 744 Motooka, Fukuoka 8190395, Japan;
Kyushu Univ, Dept Elect, 744 Motooka, Fukuoka 8190395, Japan;
Univ Teknol Malaysia, Malaysia Japan Int Inst Technol, Jalan Sultan Yahya Petra, Kuala Lumpur 54100, Malaysia;
Crystal growth; Carbon nanomaterials; Electrodeposition; Germanium-on-insulator; Graphene; Rapid melting growth;
机译:快速熔化生长在绝缘体上单层石墨烯上形成大晶粒结晶锗
机译:网格形状和大小可控的快速熔化生长,可在绝缘子上形成单晶(100),(110)和(111)Ge网络
机译:通过温度调制的连续快速熔化生长高质量地形成多层绝缘体上硅锗结构
机译:利用RTA技术通过SiGe混合触发快速熔化生长在Si平台上形成绝缘体上Ge的结构
机译:基于快速熔体生长的用于三维集成电路的高性能绝缘体上锗MOSFET。
机译:通过快速熔化生长在绝缘体上实现无缺陷的高锡含量GeSn
机译:纳米结构绝缘体上锗的形成,用于在面板上集成多功能材料