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机译:快速熔化生长在绝缘体上单层石墨烯上形成大晶粒结晶锗
Univ Teknol Malaysia, Malaysia Japan Int Inst Technol, Jalan Sultan Yahya Petra, Kuala Lumpur 54100, Malaysia;
Kyushu Univ, Dept Elect, 744 Motooka, Fukuoka 8190395, Japan;
Kyushu Univ, Dept Elect, 744 Motooka, Fukuoka 8190395, Japan;
Kyushu Univ, Dept Elect, 744 Motooka, Fukuoka 8190395, Japan;
Kyushu Univ, Dept Elect, 744 Motooka, Fukuoka 8190395, Japan;
Kyushu Univ, Dept Elect, 744 Motooka, Fukuoka 8190395, Japan;
Univ Teknol Malaysia, Malaysia Japan Int Inst Technol, Jalan Sultan Yahya Petra, Kuala Lumpur 54100, Malaysia;
Semiconductors; Carbon materials; Germanium; Germanium-on-insulator; Single layer graphene; Rapid melting growth;
机译:绝缘体上新型锗结构的快速熔化生长在绝缘体上的石墨烯上形成锗(111)
机译:网格形状和大小可控的快速熔化生长,可在绝缘子上形成单晶(100),(110)和(111)Ge网络
机译:通过无偏析快速熔化生长,使硅浓度均匀的大晶粒绝缘体上锗
机译:通过自组织播种快速熔化生长形成绝缘体上的巨型SiGe晶体
机译:基于快速熔体生长的用于三维集成电路的高性能绝缘体上锗MOSFET。
机译:生长速率对单晶域内石墨烯晶格缺陷形成的影响
机译:石墨烯:用乙烷的低温和大型单晶石墨烯的低温和快速生长(小3/2018)