Manufacturing a thin layer element comprises epitaxial growth of crystalline layer of a germanium material on the crystalline layer, and formation of an oxide layer on a face of the germanium material opposed to a silicon germanium plate

摘要

The manufacturing of a thin layer element (6) comprises epitaxial growth of crystalline layer (2) of a germanium material on the crystalline layer of a silicon germanium plate formed in silicon germanium material, formation of an oxide layer on a face of the germanium material opposed to the silicon germanium plate to form a structure, an arrangement of the structure with a substrate receiver (10), and an elimination of the plate. The crystalline layer of the germanium material has a thickness such as mesh parameter, which is determined by the crystalline layer of the plate. The manufacturing of a thin layer element (6) comprises epitaxial growth of crystalline layer (2) of a germanium material on the crystalline layer of a silicon germanium plate formed in silicon germanium material, formation of an oxide layer on a face of the germanium material opposed to the silicon germanium plate to form a structure, an arrangement of the structure with a substrate receiver (10), and an elimination of the plate. The crystalline layer of the germanium material has a thickness such as mesh parameter, which is determined by the crystalline layer of the plate. The epitaxial growth of a silicon material is placed on the first material before the formation of the oxide layer. The germanium material and thickness of the silicon material are chosen so that the mesh parameter is determined by the crystalline layer of the silicon germanium plate. The formation of the oxide layer comprises a partial oxidation of the epitaxial layer of the silicon to obtain the oxide layer. The silicon germanium plate is a superficial layer placed on insulating material, in which superficial layer forms the crystalline layer of the silicon germanium material.