EPITAXIAL SILICON GERMANIUM LAYER FORMATION METHOD CAPABLE OF PREVENTING THE FORMATION OF A FACET ON AN EPITAXIAL SILICON GERMANIUM LAYER, AND A SEMICONDUCTOR DEVICE MANUFACTURING METHOD THEREOF

摘要

PURPOSE: An epitaxial silicon germanium layer formation method and a semiconductor device manufacturing method thereof are provided to prevent the non-uniform injection of an impurity and the imbalance of stress by preventing the generation of a facet.;CONSTITUTION: A plurality of gate patterns(15) are formed on a substrate(11). The gate pattern is formed to sequentially laminate a gate insulating layer(12), a gate electrode(13), and a gate hard mask layer(14). A gate spacer(16) is formed in both side walls of the gate pattern. A cleaning treatment process is executed after forming the gate spacer. A laminated epitaxial layer(19) is formed on the substrate which is exposed between the gate patterns.;COPYRIGHT KIPO 2011