Negative electron-beam resist hard mask ion beam etching process for the fabrication of nanoscale magnetic tunnel junctions

摘要

The authors have demonstrated fabrication of 30 nm diameter perpendicular anisotropy magnetic tunnel junctions (MTJs) using negative electron-beam resist (NER) as the ion beam etching (IBE) hard mask. The NER pillar of 30 nm diameter and 105 nm thickness was fabricated by electron-beam lithography. The redeposition of the MTJ etching debris generated during the IBE on the outer surface of the NER pillar increased the lateral etch resistance of the resist polymer, allowing the edge profile to remain constant for the duration of the MTJ etching, resulting in a vertical MTJ sidewall profile. A multistep IBE (repetition of 45° primary etching and 30° secondary etching) was conducted to reduce the MTJ sidewall redeposition while reducing mechanical damage. The measurement results showed a tunnel magneto-resistance ratio of 22% at 30 nm junction diameter.