Improvement of RF MEMS devices by spring constant scaling laws

摘要

The technology for radio frequency micro-electro-mechanical system (RF MEMS) is well established. In the next phase of miniaturization, RF MEMS transforming into RF nano-electro-mechanical system (NEMS) requires scaling laws. For MEMS devices, vertical scaling laws are available in the literature. However, existing scaling laws are isotropic and not valid for the majority of the MEMS devices. Like VLSI technology, the scaling in the MEMS is asymmetric and needs optimization in each direction. In the MEMS, depending upon the working principle, the scaling laws vary from device to device. In the present work, spring constant scaling laws for the electrostatic RF MEMS devices are derived given the device performance. The scaling laws are derived in such a way that existing limitations of the MEMS technology like low switching speed, high pull-in voltage, stiction, etc., are minimized and the response of the switch is improved.