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首页> 外文期刊>Nanoscience and Nanotechnology Letters >Influences of Nano-Scale Packaging Induced Residual Strain on Performances of RF MEMS Devices
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Influences of Nano-Scale Packaging Induced Residual Strain on Performances of RF MEMS Devices

机译:纳米封装诱导的残余应变对RF MEMS器件性能的影响

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A multiphysics finite element analysis (FEA) was performed to investigate the influences of nanoscale packaging induced residual strain on the performances of RF MEMS devices. A packaged surface acoustic wave (SAW) resonator was taken as a research example. Results show that the packaging process will induce an uneven distribution of deformation in the surface layer of the chip substrate. The difference between maximum and minimum displacements linearly increases with the packaging pressure. This uneven surface deformation will affect the propagation of the surface acoustic wave and the RF characteristics of the device. Both resonance and anti-resonance frequencies of the resonator shift.
机译:进行了多物理场有限元分析(FEA),以研究纳米级封装诱发的残余应变对RF MEMS器件性能的影响。以封装的表面声波(SAW)谐振器为研究实例。结果表明,封装过程将在芯片基板的表面层中引起变形的不均匀分布。最大和最小位移之间的差异随包装压力线性增加。这种不均匀的表面变形将影响表面声波的传播和设备的RF特性。谐振器的谐振和反谐振频率均发生偏移。

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