Strain effects on the DC performance of single-layer TMD-based double-gate field-effect transistors

摘要

The effects of biaxial strain on the direct-current (DC) performance of transition-metal dichalcogenide (TMD)-based double-gate field-effect transistors (DGFETs) were investigated. The TMDs used as the transistor channel were MoS $$_2$$ 2 , MoSe $$_2$$ 2 , WS $$_2$$ 2 , and WSe $$_2$$ 2 . The results indicated that tensile strain increased the DC performance of the DGFET, and that this performance enhancement was greater for the DGFET based on WSe $$_2$$ 2 compared with the other TMDs. Small compressive strain decreased the performance of the transistor, but with larger compressive strain, this performance degradation was partly recovered.