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Double-gate field-effect transistor, integrated circuit using the transistor and method of manufacturing the same
Double-gate field-effect transistor, integrated circuit using the transistor and method of manufacturing the same
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机译:双栅场效应晶体管,使用该晶体管的集成电路及其制造方法
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摘要
A double-gate field-effect transistor includes a substrate, an insulation film formed on the substrate, source, drain and channel regions formed on the insulation film from a semiconductor crystal layer, and two insulated gate electrodes electrically insulated from each other. The gate electrodes are formed opposite each other on the same principal surface as the channel region, with the channel region between the electrodes. The source, drain and channel regions are isolated from the surrounding part by a trench, forming an island. Gate insulation films are formed on the opposing side faces of the channel region exposed in the trench. The island region between the gate electrodes is given a width that is less than the length of the channel region to enhance the short channel effect suppressive property of structure.
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