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In Situ Auger Electron Spectroscopy Study Of The Pentacene Film Grown On The Srtio_3(001) Surface

机译:Srtio_3(001)表面生长的并五苯薄膜的原位俄歇电子能谱研究

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We have investigated the growth and photodecomposition of the pentacene ultrathin film grown on the TiO_2-terminated SrTi O_3(001) single crystal substrate by in situ Auger electron spectroscopy (AES) and ex situ atomic force microscopy (AFM). The careful analyses of AES and AFM data have revealed that the AES intensities of C(KLL) in the growth of the pentacene were to some extent larger than those in its photodecomposition, for the coverage of pentacene islands estimated by AFM. This result supports the existence of adsorbed-like pentacene precursors before the photodecomposition as was proposed in our previous report.
机译:我们通过原位俄歇电子能谱(AES)和非原位原子力显微镜(AFM)研究了在TiO_2封端的SrTi O_3(001)单晶衬底上生长的并五苯超薄膜的生长和光分解。对AES和AFM数据的仔细分析显示,并五苯的生长中C(KLL)的AES强度在一定程度上要比光分解中的C(KLL)大,这是由AFM估计的并五苯岛的覆盖范围。如我们先前的报告中所提出的,该结果支持在光分解之前存在吸附样并五苯前体。

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  • 来源
    《Japanese journal of applied physics》 |2009年第2期|19-21|共3页
  • 作者单位

    Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan;

    Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan;

    Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan;

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