A Submillimeter-Wave HEMT Amplifier Module With Integrated Waveguide Transitions Operating Above 300 GHz

摘要

In this paper, we report on the first demonstration of monolithically integrated waveguide transitions in a submillimeter-wave monolithic integrated circuit (S-MMIC) amplifier module. We designed the module for a targeted frequency range of 300–350 GHz, using WR2.2 for the input and output waveguides. The waveguide module utilizes radial $E$-plane transitions from S-MMIC to waveguide. We designed back-to-back radial probe transitions separated by thru transmission lines to characterize the module, and have incorporated the radial $E$-plane transitions with an S-MMIC amplifier, fabricated monolithically as a single chip. The chip makes use of an S-MMIC process and amplifier design from the Northrop Grumman Corporation, Redondo Beach, CA, using 35-nm gate-length InP transistors. The integrated module design eliminates the need for wire bonds in the RF signal path, and enables a drop-in approach for minimal assembly. The waveguide module includes a channel design, which optimizes the $E$ -plane probe bandwidth to compensate for an S-MMIC width, which is larger than the waveguide $b$ dimension, and is compatible with S-MMIC fabrication and design rules. This paper demonstrates for the first time that waveguide-based S-MMIC amplifier modules with integrated waveguide transitions can be successfully operated at submillimeter-wave frequencies.