Simultaneous Quality Improvement of Tunneling- and Interpoly-Oxides of Nonvolatile Memory Devices by NH{sub}3 and N{sub}2O Nitridation

摘要

This brief presents a new nitridation process on floating poly-Si gate to improve the quality of both tunneling oxide and inter-poly-oxide of nonvolatile memories. Three types of poly-Si for a floating gate have been investigated. We found in-situ doped poly-Si shows the best performance in terms of breakdown field, charge-to-breakdown (Q{sub}(BD)) and trapping rate. The Q{sub}(BD) of interpoly-oxide can be reached as high as 35 C/cm{sup}2. This scheme is very promising for nonvolatile memory devices.