Structure and Conductance of the Breakdown Spot During the Early Stages of Progressive Breakdown

摘要

It has been shown that under accelerated stress below ap4 V, thin gate oxides are subject to progressive breakdown (BD), i.e., a gradual growth of the BD spot up to a destructive BD. This paper investigates the conduction mechanisms of the BD spot during the early stages of progressive BD through the measurement of the I-V characteristics using carrier separation. It is shown that a model with no free parameter based on the concept of cotunneling provides a good evaluation of the post-BD current. This model implies a physical microstructure, and its plausibility is compared to direct transmission electron microscopy (TEM) observations