Impact of Inner Pickup on ESD Robustness of Multifinger MOSFET in 28-nm High- src='/images/tex/348.gif' alt='k'> /Metal Gate CMOS Process

摘要

The impact of pickup structure on electrostatic discharge (ESD) robustness of multifinger MOSFET in 28-nm high- /metal gate CMOS process was investigated in this paper. Verified in silicon, the multifinger MOSFET without the pickup structure inserted into its source region can sustain the higher ESD level and more compact layout area.