A 0.27e src='/images/tex/33864.gif' alt='^{-}_{text {rms}}'> Read Noise 220- src='/images/tex/33865.gif' alt='mu text{V}/text{e}^{-}'> Conversion Gain Reset-Gate-Less CMOS Image Sensor With 0.11- src='/images/tex/26026.gif' alt='mu text{m}'> CIS Process

摘要

A low temporal read noise and high conversion gain reset-gate-less CMOS image sensor (CIS) has been developed and demonstrated for the first time at photoelectron-counting-level imaging. To achieve a high pixel conversion gain without fine or special processes, the proposed pixel has two unique structures: 1) coupling capacitance between the transfer gate and floating diffusion (FD) and 2) coupling capacitance between the reset gate and FD, for removing parasitic capacitances around the FD node. As a result, a CIS with the proposed pixels is able to achieve a high pixel conversion gain of and a low read noise of 0.27e using correlated multiple-sampling-based readout circuitry.