Accelerated Degradation of IGBTs Due to High Gate Voltage at Various Temperature Environments

摘要

In this study, degradation phenomena due to gate bias stress at elevated temperature for the reliability test of punch-through IGBTs, which are widely used in DC circuit systems for automotive applications, were investigated. For the reliability tests of various temperatures, 4000 times temperature cycle stress was applied in IGBTs between -40 degrees C and 200 degrees C to accelerate the degradation process using the wide range temperature. And the delamination of the passivation layer and the metal layer in IGBTs was observed using the scan acoustic microscopy. In addition, the positive bias stress with 48 V at elevated temperature of 150 degrees C for 60 min was applied to the gate, the threshold voltage increased up to 6.07 V due to charge trapping at gate oxide. We also compared the recovery of the devices, but the IGBTs that stressed with high DC field and elevated temperature slowed down the recovery process after 24 hours without reverse voltage. This work was focused to find the device recovery considering real conditions. Therefore, the various temperature stress and high electric field stress are important in the reliability test for IGBTs, it was reported the IGBT degradation process and failure symptoms using the accelerated and various reliability tests.