Circuit structure for reducing surge voltages during switching processes on an engaging or non-engaging insulated gate bipolar transistor (IGBT) generates a gate current to protect the IGBT

摘要

Voltage is measured on an insulated gate bipolar transistor (IGBT). If a certain reference voltage is exceeded, a switch opens. A current conduction is formed via an energy store (K) and a first diode (D1) turns into a gate (G) for the IGBT, which has an anti-parallel recovery diode (D2) and acts as an electronic switching device. After a set time and the IGBT is switched off, the switch closes. An Independent claim is also included for a method for reducing surge voltages during switching processes on an engaging or non-engaging insulated gate bipolar transistor.