Controlling current conductive state of power semiconductor module, such as insulated gate bipolar transistor (IGBT), generating voltage drop which is supplied to control which generates gate current

摘要

The power semiconductor module (1) comprises gate, emitter and collector terminals and in its conductive state current flows in main current path between emitter and collector. The current generates a voltage drop at a stray inductivity (2) in series with the power semiconductor module. The voltage drop forms an actual value, as a current equivalent, supplied to the control which generates a gate current (IG), as a difference between a constant current source (3) and a current (IR) transmitted by control.