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A study on IGBT junction temperature (Tj) online estimation using gate-emitter voltage (Vge) at turn-off

机译:关断时使用栅极-发射极电压(Vge)在线估算IGBT结温(Tj)的研究

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摘要

A novel method is presented for online estimation of the junction temperature (Tj) of semiconductor chips in IGBT modules, based on evaluating the gate-emitter voltage (Vge) during the IGBT switch off process. It is shown that the Miller plateau width (in the Vge waveform) depend linearly on the junction temperature of the IGBT chips. Hence, a method can be proposed for estimating the junction temperature even during converter operation - without the need of additional thermal sensors or complex Rth network models. A measurement circuit was implemented at gate level to measure the involved time duration and its functionality was demonstrated for different types of IGBT modules. A model has been proposed to extract Tj from Vge measurements. Finally, an IGBT module with semiconductor chips at two different temperatures has been measured using Vge method and this method was found to provide the average junction temperature of all the semiconductor chips.
机译:在评估IGBT关断过程中的栅极-发射极电压(Vge)的基础上,提出了一种在线估算IGBT模块中半导体芯片结温(Tj)的新方法。结果表明,米勒平台宽度(在Vge波形中)线性地取决于IGBT芯片的结温。因此,可以提出一种即使在转换器运行期间也可以估算结温的方法,而无需额外的热传感器或复杂的Rth网络模型。在门级实施了一个测量电路以测量所涉及的持续时间,并针对不同类型的IGBT模块演示了其功能。已经提出了一种从Vge测量中提取Tj的模型。最后,使用Vge方法测量了具有两个不同温度的半导体芯片的IGBT模块,发现该方法可提供所有半导体芯片的平均结温。

著录项

  • 来源
    《Microelectronics & Reliability》 |2014年第11期|2423-2431|共9页
  • 作者单位

    ABB Switzerland Ltd, Corporate Research, Segelhofstrasse 1 K, 5405 Baden, Switzerland;

    ABB Switzerland Ltd, Corporate Research, Segelhofstrasse 1 K, 5405 Baden, Switzerland;

    ABB Switzerland Ltd, Corporate Research, Segelhofstrasse 1 K, 5405 Baden, Switzerland;

    ABB Switzerland Ltd, Corporate Research, Segelhofstrasse 1 K, 5405 Baden, Switzerland;

    ABB Switzerland Ltd, Corporate Research, Segelhofstrasse 1 K, 5405 Baden, Switzerland;

    ABB Switzerland Ltd, Corporate Research, Segelhofstrasse 1 K, 5405 Baden, Switzerland;

    ABB Switzerland Ltd, Corporate Research, Segelhofstrasse 1 K, 5405 Baden, Switzerland;

    ABB Switzerland Ltd, Business Unit Power Conversion, Austrasse, 5300 Turgi, Switzerland;

    ABB Switzerland Ltd, Business Unit Power Conversion, Austrasse, 5300 Turgi, Switzerland;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    IGBT; Junction temperature; Lifetime estimation; Temperature-sensitive electrical parameters; Gate-emitter voltage; Miller plateau;

    机译:IGBT;结温;寿命估算;对温度敏感的电气参数;栅极-发射极电压;米勒高原;

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