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Breakdown of Gate Oxide of SiC-MOSFETs and Si-IGBTs under High Temperature and High Gate Voltage

机译:高温高栅极电压下SiC-MOSFET和Si-IGBT栅极氧化物的击穿

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New results of gate oxide stress tests with the step-by-step increase of the gate voltage are shown for SiC-MOSFETs. In comparison to these results, a similar gate stress test was carried out for Si-IGBTs as well. For both tests, the test temperature was set to 150deg C with the last voltage step leading to the intrinsic breakdown. The test was done for three different manufacturers of SiC-MOSFETs and two different manufacturers of Si-IGBTs. Different breakdown distributions for the different manufacturers of SiC-MOSFETs and IGBTs are shown. Only one manufacturer of SiC-MOSFETs shows a similar breakdown behavior like the IGBTs. For SiC-MOSFETs, a threshold voltage drift after the positive gate bias was found, different for the manufacturers.
机译:对于SiC-MOSFET,显示了随着栅极电压逐步增加而产生的栅极氧化物应力测试的新结果。与这些结果相比,还对Si-IGBT进行了类似的栅极应力测试。对于这两个测试,将测试温度设置为150°C,最后一个电压阶跃会导致固有击穿。该测试是针对三个不同的SiC-MOSFET制造商和两个不同的Si-IGBT制造商进行的。显示了不同制造商的SiC-MOSFET和IGBT的不同击穿分布。只有一家SiC-MOSFET的制造商表现出与IGBT类似的击穿行为。对于SiC-MOSFET,发现正栅极偏置后的阈值电压漂移,对于制造商而言是不同的。

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