Consistent model for the voltage and temperature dependence of the soft breakdown conduction mechanism in ultrathin gate oxides

摘要

The voltage and temperature dependence of the soft breakdown conduction mechanism in ultrathin gate oxides in MOS structures was investigated. Measurements performed on p- and n-type substrate samples with different oxide thicknesses were compared, and the results analyzed within the framework of the quantum point contact model for dielectric breakdown. The model has been extended so as to include the thermal vibrations of the atoms that form the constriction's bottleneck. A new interpretation of the model parameters, in connection with the potential drops distribution, is discussed.