40-mW 100°C maximum temperature operation of 655-nm bandInGaP-InGaAlP strained multiple-quantum-well laser diodes

摘要

High-power and high-temperature operation of 40 mW at 100°Cnhas been realized in 655-nm band multiple-quantum-well (MQW) laserndiodes. Both low threshold current density and low optical power densitynhave been achieved by optimizing InGaP-InGaAlP strained MQWnseparate-confinement heterostructure, high doping for acceptors innp-cladding layer and adopting low-optical-loss high-reflectivity-coatingnat the rear facet. Fundamental-transverse-mode operation, up to 70 mW,nwas obtained. High-frequency and large-intensity modulationncharacteristics above 1 GHz were demonstrated. The relative intensitynnoise values were as low as -135 dB/Hz under an optical feedback withnhigh-frequency modulation. Stable operation of 30 mW at 70°C overn1000 h was accomplished