40 mW, 100/spl deg/C maximum temperature operation of 655-nm band InGaP/InGaAlP strained multiple-quantum-well laser diodes

摘要

40 mW, 100/spl deg/C maximum temperature operations have been realized in 655-nm band InGaP-InGaAlP strained multiple quantum-well laser diodes. Fundamental-transverse-mode operations up to 50 mW, high-frequency-modulation characteristics above 1 GHz, and furthermore, 70/spl deg/C, 30 mW stable operations over 1000 hours were demonstrated.