Room-temperature pulsed operation of a GaInN multiple-quantum-well laser diode

摘要

The room-temperature pulsed operation of a five GaInN multiple-quantum-well (MQW) laser diode (LD) is reported. The lowest threshold current density was 9.5 kA/cm/sup 2/. The highest external differential quantum efficiency was 49% for a 1 mm long cavity. The laser wavelength was 417.5 nm with a full width at half maximum (FWHM) of less than the spectrum resolution of 0.2 nm. The characteristic temperature was 185 K. Pulsed operation of the LD up to 80/spl deg/C was demonstrated. Laser operation was confirmed with a duty cycle up to 10%.