Room-Temperature CW Operation of GaAs-AlGaAs Diode Lasers on Silicon-on-InsulatorWafers

摘要

Diode lasers composed of GaAs-AlGaAs fabricated on Si substrates are attractiveas potential components for optical interconnects between Si VLSI circuits. The development of such lasers has been hindered by the high density of dislocations formed in GaAs layers grown on Si substrates because of the 4% lattice mismatch between the two materials. However, several groups have achieved room-temperature CW operation of GaAs-AlGaAs diode lasers on Si substrates. In this letter, we report the first fabrication of diode lasers on silicon-on-insulator (SOI) wafers. These graded-index separate-confinement heterostructure single-quantum-well (GRINSCH-SQW) lasers have operated CW at room temperature with threshold current as low as 43 mA, differential quantum efficiency as high as 54%, and output power exceeding 60 mW/facet.